NDLI: Vertical scaling of type I InP HBT with f/sub T/

Content Provider	IEEE Xplore Digital Library
Author	Lai, J.W. Hafez, W. Feng, M.
Copyright Year	2004
Description	Author affiliation: Illinois Univ., Urbana, IL, USA (Lai, J.W.; Hafez, W.; Feng, M.)
Abstract	We have fabricated the high-speed InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) with current gain cutoff frequency, f/sub T/ from 166GHz to over 500GHz by the approach of vertical scaling. Collector thickness is reduced from 3000/spl Aring/ to 750/spl Aring/ and the peak current density is increased up to 1300kA/cm/sup 2/. In this paper, device RF performance has been compared with respect to materials with different vertical dimensions. The scaling limitation is also studied by analytical approach. The extracted physical parameters suggest that the parasitic emitter resistance is the major limit on further enhancing ultra-scaled HBT intrinsic speed due to the associated RECBC delay. The cut-off frequency of a 500/spl Aring/ collector SHBT has been measured and the results indicate a dramatic drop on f/sub T/, supporting the conclusion projected by model analysis. It is also commented that for deeply downscaled HBTs, impact ionization could be another degrading mechanism limits device bandwidth.
Starting Page	1
Ending Page	7
File Size	1357812
Page Count	7
File Format	PDF
ISBN	981256196X
DOI	10.1109/LECHPD.2004.1549663
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-08-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Heterojunction bipolar transistors Cutoff frequency Current density Radio frequency Delay Electrical resistance measurement Frequency measurement Impact ionization Degradation
Content Type	Text
Resource Type	Article

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