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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Demirel, N. Kerherve, E. Pache, D. Plana, R. |
| Copyright Year | 2009 |
| Description | Author affiliation: IMS Laboratory, COFI Department, Microwave Team, 33405 Talence Cedex, France (Demirel, N.; Kerherve, E.) || LAAS-CNRS, University of Toulouse, France (Plana, R.) || STMicroelectronics, R&D, Crolles, France (Pache, D.) |
| Abstract | This paper describes the techniques to design a SiGe power amplifier (PA) for millimeter wave (mmW) applications. The design methodology of a balanced four-stage common emitter circuit topology was reported. The power amplifier was fully integrated including matching elements and bias circuit. The matching networks use coplanar waveguide (CPW) lines and MIM capacitors. Design considerations including parasitic elements, interconnections, pad model and matching structures are detailed. All these elements are taken into account to optimize the maximum output power. A comparison of the simulated and measured small-signal results is presented up to 110GHz. The simulated and measured large-signal parameters are shown at 60, 65 and 77GHz. |
| Starting Page | 37 |
| Ending Page | 41 |
| File Size | 13744380 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424453566 |
| ISSN | 16794389 |
| DOI | 10.1109/IMOC.2009.5427636 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-11-03 |
| Publisher Place | Brazil |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon germanium Germanium silicon alloys Power amplifiers Coplanar waveguides Millimeter wave integrated circuits Millimeter wave technology Design methodology Circuit topology MIM capacitors Integrated circuit interconnections design considerations Power Amplifier millimeter wave applications HBT SiGe |
| Content Type | Text |
| Resource Type | Article |
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