NDLI: Voltage contrast defect inspection of contacts and vias for quarter micron devices

Content Provider	IEEE Xplore Digital Library
Author	Yamazaki, Y. Hayashi, H. Miyoshi, M.
Copyright Year	1999
Description	Author affiliation: Integrated Circuit Adv. Process Eng. Dept., Toshiba Corp., Yokohama, Japan (Yamazaki, Y.)
Abstract	Wafer inspection techniques, which mainly detect the pattern defects and particles using the optical system, have been widely adopted in the ULSI manufacturing process for a process optimization and a process and field level monitoring. However, with the recent aggressive scaling of the ULSI design rule, a capture rate of the killer defects by the conventional optical inspection system is being degraded because of the spatial resolution limitation and the increase of invisible defect contribution. Especially, the detection of invisible killer defects such as an electric contact failures, open and short failures, which can not be detected by the optical inspection system, is being strongly required. In recent studies, these kinds of defect were tried to be detected using the voltage contrast image of the scanning electron microscope (SEM) technique. Therefore, these are called as "voltage contrast defects". In this paper, we investigated the voltage contrast defect detection focusing on the electrical failure of contacts and vias using the SEM technique.
Starting Page	188
Ending Page	189
File Size	399883
Page Count	2
File Format	PDF
ISBN	4930813972
DOI	10.1109/IMNC.1999.797540
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-07-06
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. Of Applied Physics
Subject Keyword	Voltage Inspection Scanning electron microscopy Ultra large scale integration Manufacturing processes Monitoring Optical design Degradation Spatial resolution Optical detectors
Content Type	Text
Resource Type	Article

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