NDLI: Effect of parasitic bipolar transistor in submicron MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Grabowski, F.
Copyright Year	1995
Description	Author affiliation: Dept. of Electr. Eng., Tech. Univ. Rzeszow, Poland (Grabowski, F.)
Abstract	This paper is concerned with the degradation of submicron MOS transistors due to hot-electrons, particularly of avalanche breakdown. It is known that there exists a direct relationship between the multiplication factor M and I/sub sub/. In order to determine the maximum allowable V/sub D/, two definitions are most often used for the determination of I/sub sub/. However, these definitions are not compatible and lead to difficulties when we compare the results of avalanche breakdown. Therefore the analysis in this paper is concerned with the discrepancy between the definitions and shows how to identify the interpretation. It appears that taking into account the influence of the electron mean free path /spl lambda/, the ionisation constants A/sub 1/ and B/sub 1/ and the maximum field near the drain edge, E/sub m/ vs. the drain voltage V/sub D/ can give compatible results to I/sub sub/ vs. V/sub D/ independent of definition.
Starting Page	659
Ending Page	663
File Size	335105
Page Count	5
File Format	PDF
ISBN	0780327861
DOI	10.1109/ICMEL.1995.500944
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-09-12
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bipolar transistors MOSFETs Avalanche breakdown Voltage Degradation Electrons Lead Impact ionization Substrates Feedback
Content Type	Text
Resource Type	Article

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