NDLI: Noise characterisation in CMOS APS imagers for highly integrated imaging systems

Content Provider	IEEE Xplore Digital Library
Author	Belahrach, H. Karim, M. Farre, J.
Copyright Year	2001
Description	Author affiliation: Faculte des Sci. et Techniques, Ecole Royale de l'Air, Marrakech, Morocco (Belahrach, H.)
Abstract	The design of active pixel image sensors (APS) fabricated in traditional CMOS foundries has been a topic of renewed interest in the last several years. The noise reduction is a key issue and often defines the sensitivity or detection limit. In this paper, a thorough noise analysis is made of the expected performance of the APS imagers. White noise and low-frequency (LF) noise sets a fundamental limit on APS performance, especially for low-light applications. Therefore, a detailed theoretical analysis of the in-pixel amplifier and the readout circuit response to the LF noise is investigated. Some experimental LF noise results obtained at room temperature on N-channel MOSFETs fabricated using a 0.7 /spl mu/m CMOS process are presented. We show that the LF noise spectra generated by small area MOSFETs are Lorentzian rather than pure 1/f shape chiefly for the weak inversion mode. Next, using PSPICE simulations, the noise due to the readout circuit during integration is carried out.
Sponsorship	IEEE
Starting Page	31
Ending Page	34
File Size	286436
Page Count	4
File Format	PDF
ISBN	078037522X
DOI	10.1109/ICM.2001.997479
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-10-29
Publisher Place	Morocco
Access Restriction	Subscribed
Rights Holder	ICM
Subject Keyword	Low-frequency noise CMOS image sensors Circuit noise MOSFETs Pixel Image sensors Foundries Noise reduction Image analysis Performance analysis
Content Type	Text
Resource Type	Article

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