NDLI: Gas-phase etching of sacrificial oxides using anhydrous HF and CH/sub 3/OH

Content Provider	IEEE Xplore Digital Library
Author	Jong Hyun Lee Yong Il Lee Won Ick Jang Chang Seung Lee Hyung Joun Yoo
Copyright Year	1997
Description	Author affiliation: Semicond. Technol. Div., Electron. & Telecommun. Res. Inst., Taejon, South Korea (Jong Hyun Lee)
Abstract	One of the major issues in surface micromachining is process-induced failures of overhanged microstructures, after sacrificial removal. This failure process consists of temporary deformation due to capillary force and permanent stiction of the deformed microstructures to substrate due to the residue product. In order to alleviate this failure, some researchers have investigated the use of low surface-tension liquids, temporary support, sublimation of the final liquid or supercritical method. These conventional methods, however, are complicated liable to plasma damage during PR ashing, or require careful handling of the samples in rinse liquid. In this paper, we present a newly developed anhydrous HF gas-phase etching (GPE) technology for the removal of sacrificial TEOS (tetraethylorthosilicate) oxide. In order to minimize the capillary force of gas-liquid interface and residue product, methanol of low vapor pressure was employed as a catalyst instead of water vapor. The proposed process features simplicity, virtually no capillary forces and even compatibility with IC process as well. The effectiveness of HF GPE with methanol was verified by successfully fabricating the polysilicon cantilevers up to 1000 um in length with no stiction. The etch rate of HF GPE was 10-15 um/hr for the sacrificial TEOS oxide of 0.1-2 um channel height.
Starting Page	448
Ending Page	453
File Size	663176
Page Count	6
File Format	PDF
ISBN	0780337441
ISSN	10846999
DOI	10.1109/MEMSYS.1997.581888
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-01-26
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hafnium Microstructure Plasma applications Methanol Fabrication Dry etching Micromechanical devices Surface tension Micromachining Substrates
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Mechanical Engineering Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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