NDLI: The intrinsic spin Hall effect

Content Provider	IEEE Xplore Digital Library
Author	Zhang, S.
Copyright Year	2005
Description	Author affiliation: Dept. of Phys., Stanford Univ., CA, USA (Zhang, S.)
Abstract	Summary form only given, as follows. A recent theory predicts that dissipationless spin currents can be induced purely by an electric field in conventional semiconductors. The dissipationless spin current is derived from a novel topological structure in momentum space, is independent of the sample disorder and leads to the intrinsic spin Hall effect. In hole doped semiconductors, with or without inversion symmetry breaking, there are no vertex corrections due to impurities scattering, and there are no extrinsic contributions to the spin Hall effect in the clean limit. The author analyzes a recent experiment on the spin Hall effect, and shows that it is consistent with the intrinsic nature of the effect. The author also shows that the spin Hall effect can be quantized in semiconductors with appropriate strain gradients, but in the absence of any external magnetic fields or the associated time reversal symmetry breaking.
File Size	59981
File Format	PDF
ISBN	0769523986
DOI	10.1109/ICMENS.2005.120
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-07-24
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hall effect Magnetic field induced strain Physics Buildings Semiconductor impurities Scattering Magnetic analysis Micromechanical devices
Content Type	Text
Resource Type	Article

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