NDLI: Analysis and mitigation of NBTI-induced performance degradation for power-gated circuits

Content Provider	IEEE Xplore Digital Library
Author	Kai-Chiang Wu Marculescu, D. Ming-Chao Lee Shih-Chieh Chang
Copyright Year	2011
Description	Author affiliation: Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, USA (Kai-Chiang Wu; Marculescu, D.) \|\| Department of Computer Science, National Tsing Hua University, Hsinchu, Taiwan (Ming-Chao Lee; Shih-Chieh Chang)
Abstract	Device aging, which causes significant loss on circuit performance and lifetime, has been a main factor in reliability degradation of nanoscale designs. Aggressive technology scaling trends, such as thinner gate oxide without proportional downscaling of supply voltage, necessitate an aging-aware analysis and optimization flow in the early design stages. Since PMOS sleep transistors in power-gated circuits suffer from static NBTI during active mode and age very rapidly, the aging of power-gated circuits should be explicitly addressed. In this paper, for power-gated circuits, we present a novel methodology for analyzing and mitigating NBTI-induced performance degradation. Aging effects on both logic networks and sleep transistors are jointly considered for accurate analysis. By introducing 25% redundant sleep transistors with reverse body bias applied, the proposed methodology can significantly mitigate the long-term performance degradation and thus extend the circuit lifetime by 3X.
Starting Page	139
Ending Page	144
File Size	505186
Page Count	6
File Format	PDF
ISBN	9781612846583
e-ISBN	9781612846606
e-ISBN	9781612846590
DOI	10.1109/ISLPED.2011.5993626
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-08-01
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Aging Transistors Switching circuits Logic gates Integrated circuit modeling Mathematical model Reverse body bias Leakage NBTI Power gating
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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