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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hartnagel, H. |
| Copyright Year | 2009 |
| Description | Author affiliation: Technische Universität Darmstadt, Merckstr. 25, D-64283 Darmstadt, Germany (Hartnagel, H.) |
| Abstract | A new type of active device is presented, which can provide relatively large signal powers in the frequency range up to 2 THz. It is based on an electron resonance structure formed by a semiconductor heterojunction structure. The electrons of the n-layer need to be accelerated by an applied alternating voltage Ve They reach the barrier of the wide-gap semiconductor and are reflected there without loss of kinetic energy. They then travel ballistically towards the opposite barrier, where they are reflected again. When Ve changes the polarity, this process continues. The resulting electron resonance produces THz signals. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 209707 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424438297 |
| DOI | 10.1109/CLEOPR.2009.5292402 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-08-30 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electrons Power generation Resonance Signal generators Acceleration Voltage Electromagnetic scattering Indium gallium arsenide Optical resonators Frequency Nanometric Heterostructure Terahertz Source Ballistic Resonance |
| Content Type | Text |
| Resource Type | Article |
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