NDLI: Bias-dependent dual-spectral InAs/In/sub 0.15/Ga/sub 0.85/As quantum dot infrared photodetectors

Content Provider	IEEE Xplore Digital Library
Author	Zhengmao Ye Campbell, J.C.
Copyright Year	2001
Description	Author affiliation: Microelectron. Res. Center, Texas Univ., Austin, TX, USA (Zhengmao Ye)
Abstract	InAs/InGaAs quantum dots infiared photodetectors (QDIPs) were studied. We report an $InAs/In_{0.15}Ga_{0.85}As$ QDIP with bias-dependent multispectral characteristics. The QDIP sample was grown on a semi-insulating GaAs(001) substrate by solid-source molecular beam epitaxy (MBE). This QDIP sample consisted of five stacks of InAs pyramidal QDs capped by InGaAs and sandwiched between heavily-doped GaAs layers. By introducing In into the GaAs cap layers, we could change the intersubband transition in the QDs. Fourier transformation infrared spectroscopy measurement showed a peak photoresponse at the wavelength of ~5.6μm for a bias of -0.5V. At the bias of -0.8V, a photoresponse at the wavelength of ~9.lμm could be observed; the magnitude of photoresponse was comparable to that of the ~5.6μm peak. With further increment of the bias the photoresponse at ~9.lμm dominated the spectrum. The spectrum also indicated that the photoresponse was due to a band-to-band intersubband transition in the InAs QDs.
Starting Page	766
Ending Page	767
File Size	131348
Page Count	2
File Format	PDF
ISBN	0780371054
ISSN	10928081
DOI	10.1109/LEOS.2001.969040
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-11-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum dots Photodetectors Current measurement Dark current Noise figure Noise measurement Temperature measurement Wavelength measurement Density measurement
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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