NDLI: Simulation of a near infrared light-activated 4H-SiC Darlington transistor switches

Content Provider	IEEE Xplore Digital Library
Author	Hongbin Pu Zhiming Chen Xianfeng Feng Baoshan Ma Liuchen Li
Copyright Year	2004
Description	Author affiliation: Dept. of Electron. Eng., Xi'an Univ. of Technol., China (Hongbin Pu; Zhiming Chen; Xianfeng Feng; Baoshan Ma; Liuchen Li)
Abstract	The novel near infrared light-activated Darlington heterojunction transistor power switch made of SiC has been proposed, in which SiCGe/SiC pn is employed to produce a base current by means of optical illumination. By using two-dimensional numerical simulation MEDICI, the SiCGe/SiC photodetector can be triggered by a near infer-red laser beam if the composition parameters of the Sil-x-yCxGey have been chosen properly. Performance of the near Infrared light-activated power switch was simulated, which has shown that the light-activated device has very good switching characteristics at 0.85/spl mu/m for optical intensity of 1.0 Watt/cm2. Based on our simulation results, the distribution of current density predicts that the auxiliary transistor is turned on at first by a low density of photocurrent and then the main transistor is turned on. The collector current of the device in the on-state is concentrated in a region underneath the main emitter.
Sponsorship	Chinese Inst. of Electron. Japan Soc. of Appl. Phys./Silicon Technol. Div
Starting Page	236
Ending Page	239
File Size	224438
Page Count	4
File Format	PDF
ISBN	0780381912
DOI	10.1109/IWJT.2004.1306836
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-03-16
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	IEEE, NJ
Subject Keyword	Silicon carbide Medical simulation Biomedical optical imaging Optical switches Heterojunctions Lighting Numerical simulation Photodetectors Laser beams Optical devices
Content Type	Text
Resource Type	Article

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