NDLI: Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Content Provider	IEEE Xplore Digital Library
Author	Kong, Y.C. Zheng, Y.D. Zhou, C.H. Deng, Y.Z. Gu, S.L. Shen, B. Zhang, R. Shi, Y. Han, P. Jiang, R.L.
Copyright Year	2004
Description	Author affiliation: Jiangsu Provincial Key Lab. of Photonic & Electron. Mater. Sci. & Technol., China (Kong, Y.C.)
Abstract	Al content in Al/sub x/Ga/sub 1-x/N/GaN double heterostructure (DH) is improved high up to x=1 by using a compressively strained GaN quantum well (QW) layer. By solving the coupled Schrodinger and Poisson equations self-consistently, we investigate the two-dimensional electron gas (2DEG) distributions and sheet densities in Al/sub x/Ga/sub 1-x/N/GaN DHs. Comparing to the 2DEG in Al/sub 0.5/Ga/sub 0.5/N/GaN single heterostructure (SH), the 2DEG sheet density in a comparable AlN/GaN/Al/sub 0.5/Ga/sub 0.5/N DH is nearly doubled from 2.31/spl times/10/sup 13/cm/sup -3/ to 4.47 /spl times/ 10/sup 13/cm/sup -3/, mainly owing to the additional piezoelectric polarization in the GaN QW. It is also shown that 2DEG in the GaN QW is increased with increasing the Al content of the top barrier due to the stronger polarization effect and large conduction band offset at the Al,Ga/sub 1-x/N/GaN interface. Increasing the lower barrier thickness will reduce the 2DEG density in the GaN QW while the 2DEG at the lower Al/sub y/Ga/sub 1-y/N/GaN interface is increased, making the total 2DEG density almost a constant.
Sponsorship	Chinese Inst. of Electron. Japan Soc. of Appl. Phys./Silicon Technol. Div
Starting Page	194
Ending Page	197
File Size	257580
Page Count	4
File Format	PDF
ISBN	0780381912
DOI	10.1109/IWJT.2004.1306792
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-03-16
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	IEEE, NJ
Subject Keyword	Electrons Gallium nitride DH-HEMTs Artificial intelligence Poisson equations Piezoelectric polarization Lattices HEMTs MODFETs Particle scattering
Content Type	Text
Resource Type	Article

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Influence of relaxation on the two-dimensional electron-gas in Al/sub x/Ga/sub 1-x/N/GaN/Al/sub y/Ga/sub 1-y/N double heterostructure with compressively strained GaN layer

Effect of polarization charges on electron transport properties of Al/sub 0.2/Ga/sub 0.8/N/GaN HFETs

Investigation on the sources of 2DEG in Al/sub x/Ga/sub 1-x/N/GaN HEMT

Characterization of the two-dimensional electron gas in Al/sub x/Ga/sub 1-x/N/GaN heterostructures with two subbands occupied

Modeling of interface scattering of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

Influence of polarization-induced electric field on subband structure and electron distribution in Al/sub x/Ga/sub 1-x/N/GaN double quantum wells

Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure

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Transport properties of the two-dimensional electron gas in Al/sub x/Ga/sub 1-x/N/GaN heterostructures

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

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