NDLI: An investigation on substrate current and hot carrier degradation at elevated temperatures for nMOSFETs of 0.13 /spl mu/m technology

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An investigation on substrate current and hot carrier degradation at elevated temperatures for nMOSFETs of 0.13 /spl mu/m technology

Content Provider	IEEE Xplore Digital Library
Author	Chen, S.Y. Lin, J.C. Chen, H.W. Jhou, Z.W. Lin, H.C. Chou, S. Ko, J. Lei, T.F. Haung, H.S.
Copyright Year	2005
Description	Author affiliation: Inst. of Mechatronics Eng., National Taipei Univ. of Technol. (Chen, S.Y.)
Abstract	In this report, nMOSFETs having 20 Aring and 32 Aring gate oxide thickness of 0.13 mum technology are used to investigate DC hot carrier reliability at elevated temperatures up to 125degC. The research also focused on the degradation of analog properties after hot carrier injection. Based on the results of experiments, the hot carrier degradation of $I_{d,op}$ (defined based on analog application) is found to be the worst case from room temperature to 125degC. This result should be a valuable message for analog circuit designers. As to the reverse temperature effect, the substrate current $(I_{b})$ commonly accepted as the statues for monitoring the drain avalanche hot carrier (DAHC) effect should be modified since the drain current $(I_{d})$ degradation and $I_{b}$ variations versus temperature have different trends. For the devices having gate oxide thinner than 20 Aring, we suggest that the worst condition in considering hot carrier reliability should be placed at elevated temperature
File Size	2243007
File Format	PDF
ISBN	0780389921
DOI	10.1109/IRWS.2005.1609579
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hot carriers Degradation MOSFETs Voltage Stress Temperature dependence Cities and towns Analog circuits Mechatronics Microelectronics
Content Type	Text
Resource Type	Article

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