NDLI: Effects of electrical stress on the frequency performance of 0.18 /spl mu/m technology NMOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Naseh, S. Deen, M.J. Marinov, O.
Copyright Year	2001
Description	Author affiliation: Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada (Naseh, S.)
Abstract	The effects of DC hot-carrier stress on DC and RF performance of submicron LDD NMOSFETs are investigated. It is shown that transit frequency f/sub T/ decreases as transconductance g/sub m/ of the transistor is degraded with stress but it is observed that degradation of f/sub T/ versus stress time is faster than that of g/sub m/. This was found to be due to the increase of the gate-source capacitance C/sub gs/ with stress. Threshold voltage V/sub th/ and output conductance g/sub ds/ increase and voltage gain of the device /spl mu//sub f/ decreases with stress. Stability factors K and /spl Delta/ also change toward higher stability with stress.
Sponsorship	IEEE Electron Devices Soc
Starting Page	119
Ending Page	123
File Size	437194
Page Count	5
File Format	PDF
ISBN	0780365119
DOI	10.1109/ICMTS.2001.928649
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-03-19
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Degradation Threshold voltage Stability Hot carriers Hot carrier effects Radio frequency MOSFETs Transconductance Capacitance
Content Type	Text
Resource Type	Article

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Effects of electrical stress on the frequency performance of 0.18 /spl mu/m technology NMOSFETs