NDLI: Charge sharing measurements of pixilated CdTe using Medipix-II chip

Content Provider	IEEE Xplore Digital Library
Author	Chmeissani, M. Maiorino, M. Blanchot, G. Pellegrini, G. Garcia, J. Lozano, M. Martinez, R. Puigdengoles, C. Mullan, M.
Copyright Year	2004
Description	Author affiliation: Inst. de Fisica d'Altes Energies, UAB Campus, Bellaterra, Spain (Chmeissani, M.; Maiorino, M.; Blanchot, G.)
Abstract	One important consideration of the design and the operation of pixilated detector is the ratio of the pixel size to the thickness of the detector. When the e-h pairs are generated and the charge drifts toward the pixel electrodes under the influence of the bias field, the charge spread is directly related to the drift time, which strongly depends on the carrier mobility and distance travelled by the carriers. This study has general impact on the design of pixilated detector; however its impact on the design and the operation of pixilated detector coupled to photon counting electronics is more profound. The results imply that designing a Cd(Zn)Te detector with very small pixel size, say 25/spl mu/m and a detector 1 mm thick, is unrealistic because in reality such intrinsic fine spatial resolution can not be attained in the corresponding image due to charge sharing.
Sponsorship	IEEE Instrumentation and Measurement Soc
Starting Page	787
Ending Page	791
File Size	338675
Page Count	5
File Format	PDF
ISBN	078038248X
ISSN	10915281
DOI	10.1109/IMTC.2004.1351164
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-05-18
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Current measurement Charge measurement Semiconductor device measurement Detectors Leak detection Electrodes Voltage Microelectronics Clouds Collaboration
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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