NDLI: Design and characterization of next-generation micromirrors fabricated in a four-level, planarized surface-micromachined polycrystalline silicon process

Content Provider	IEEE Xplore Digital Library
Author	Michalicek, M.A. Comtois, J.H. Barren, C.C.
Copyright Year	1997
Description	Author affiliation: USAF Philips Lab., Kirtland AFB, NM, USA (Michalicek, M.A.)
Abstract	This paper describes the design and characterization of several types of micromirror devices to include process capabilities, device modeling, and test data resulting in deflection versus applied potential curves. These micromirror devices are the first to be fabricated in the state-of-the-art four-level planarized polysilicon process available at Sandia National Laboratories known as the Sandia Ultra-planar Multi-level MEMS Technology (SUMMiT). This enabling process permits the development of micromirror devices with near-ideal characteristics which have previously been unrealizable in standard three-layer polysilicon processes. This paper describes such characteristics as elevated address electrodes, individual address wiring beneath the device, planarized mirror surfaces using Chemical Mechanical Polishing (CMP), unique post-process metallization, and the best active surface area to date. This paper presents the design, fabrication, modeling, and characterization of several variations of Flexure-Beam (FBMD) and Axial-Rotation Micromirror Devices (ARMD). The released devices are first metallized using a standard sputtering technique relying on metallization guards and masks that are fabricated next to the devices. Such guards are shown to enable the sharing of bond pads between numerous arrays of micromirrors in order to maximize the number of on-chip test arrays. The devices are modeled and then empirically characterized using a laser interferometer setup located at the Air Force Institute of Technology (AFIT) at Wright-Patterson AFB in Dayton, Ohio. Unique design considerations for these micromirror devices and the SUMMiT process are also discussed. The models are then compared with the empirical data to produce a complete characterization of the devices in a deflection versus applied potential curve.
Starting Page	144
Ending Page	154
File Size	1409729
Page Count	11
File Format	PDF
ISBN	0780342763
ISSN	10947116
DOI	10.1109/ICISS.1997.630255
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-10-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Micromirrors Metallization Semiconductor device modeling Testing Laboratories Micromechanical devices Chemical technology Standards development Electrodes Wiring
Content Type	Text
Resource Type	Article

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