NDLI: All-fiber continuous wave coherent homodyne terahertz spectrometer operating at 1.55 µm wavelengths

Content Provider	IEEE Xplore Digital Library
Author	Ducournau, G. Beck, A. Blary, K. Peytavit, E. Zaknoune, M. Akalin, T. Lampin, J.-F. Martin, M. Mangeney, J.
Copyright Year	2009
Description	Author affiliation: Institut d'Electronique de Microélectronique et de Nanotechnologie, Université de Lille 1, UMR, CNRS 8520, Avenue Poincaré B.P. 60069, F-59652 Villeneuve d'Ascq Cédex, France (Ducournau, G.; Beck, A.; Blary, K.; Peytavit, E.; Zaknoune, M.; Akalin, T.; Lampin, J.-F.) \|\| Institut d'Electronique Fondamentale, Université Paris-Sud, UMR CNRS 8622, Bât. 220, Centre, Scientifique d'Orsay, F-91405 Orsay Cédex, France (Martin, M.; Mangeney, J.)
Abstract	Room temperature homodyne and heterodyne THz detections are reported using an 1.55 µm-based THz source. The first experimental demonstration is a continuous wave terahertz homodyne detection, where THz emission is performed with an InGaAs/InP uni-travelling carrier photodiode monolithically integrated with a horn antenna. The coherent homodyne detection is achieved with an ion-irradiated InGaAs photoconductor integrated with a spiral antenna. Experimental results has been obtained up to 700 GHz with a good signal to noise ratio. The second experimental setup is a room temperature heterodyne detection with a schottky mixer.
Starting Page	1
Ending Page	2
File Size	173351
Page Count	2
File Format	PDF
ISBN	9781424454167
DOI	10.1109/ICIMW.2009.5325577
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-09-21
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Spectroscopy Temperature Indium gallium arsenide Photoconductivity Stimulated emission Optical mixing Frequency Optical modulation Optical sensors Signal to noise ratio
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Homodyne detection of microwaves using low-temperature-grown GaAs at 1.55 µm

Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 µm

High-frequency InP/InGaAs pin photodiodes with efficient response at short wavelengths

Investigation on fabrication of GaAsSb/InP UTC-PD based photomixer operating at 1.55 µm wavelengths

Continuous-Wave THz Homodyne Spectroscopy and Imaging System With Electro-Optical Phase Modulation for High Dynamic Range

Critical comparison of carrier lifetime at 1.55 µm of ion-irradiated InGaAs, cold-implanted InGaAsP, and ErAs:GaAs

Experimental realization of a photon-number-resolving homodyne detector

Gallium-arsenide deep-level devices for 1.55 /spl mu/m fiber-optics

Wavelength-selective receiver for simultaneous λ=1.3 µm and λ=1.55 µm RF optical transmission

All-fiber continuous wave coherent homodyne terahertz spectrometer operating at 1.55 µm wavelengths

Similar Documents

Homodyne detection of microwaves using low-temperature-grown GaAs at 1.55 µm

Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 µm

High-frequency InP/InGaAs pin photodiodes with efficient response at short wavelengths

Investigation on fabrication of GaAsSb/InP UTC-PD based photomixer operating at 1.55 µm wavelengths

Continuous-Wave THz Homodyne Spectroscopy and Imaging System With Electro-Optical Phase Modulation for High Dynamic Range

Critical comparison of carrier lifetime at 1.55 µm of ion-irradiated InGaAs, cold-implanted InGaAsP, and ErAs:GaAs

Experimental realization of a photon-number-resolving homodyne detector

Gallium-arsenide deep-level devices for 1.55 /spl mu/m fiber-optics

Wavelength-selective receiver for simultaneous λ=1.3 µm and λ=1.55 µm RF optical transmission

All-fiber continuous wave coherent homodyne terahertz spectrometer operating at 1.55 µm wavelengths