NDLI: All electrical detection of the stokes parameters of IR/THz radiation

Content Provider	IEEE Xplore Digital Library
Author	Danilov, S.N. Wittmann, B. Olbrich, P. Prettl, W. Golub, L.E. Beregulin, E.V. Ze-Don Kvon Mikhailov, N.N. Dvoretsky, S.A. Shalygin, V.A. Vinh, N.Q. van der Meer, A. Murdin, B. Ganichev, S.D.
Copyright Year	2009
Description	Author affiliation: A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia (Golub, L.E.; Beregulin, E.V.) \|\| St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia (Shalygin, V.A.) \|\| Terahertz Center, University of Regensburg, 93040 Regensburg, Germany (Danilov, S.N.; Wittmann, B.; Olbrich, P.; Prettl, W.; Ganichev, S.D.) \|\| FOM Institute for Plasma Physics Rijnhuizen, 3430 Nieuwegein, The Netherlands (Vinh, N.Q.; van der Meer, A.) \|\| Institute of Semiconductor Physics, Russian Academy of Sciences, 630090 Novosibirsk, Russia (Ze-Don Kvon; Mikhailov, N.N.; Dvoretsky, S.A.) \|\| University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom (Murdin, B.)
Abstract	A fast room temperature pure photoelectrical detection scheme for obtaining the information about polarization ellipticity of laser radiation (described by the Stokes parameters) with a bandwidth from the infrared to the terahertz range is reported. The device consists of two elements, back-to-back, which detect the polarization ellipticity and the ellipse azimuthal angle. The first element utilizes the circular photogalvanic effect in a narrow gap semiconductor and the second the linear photogalvanic effect in a bulk piezoelectric semiconductor. In contrast to optical methods we propose an all-electric approach, which is demonstrated by applying a large number of different laser sources.
Starting Page	1
Ending Page	2
File Size	332914
Page Count	2
File Format	PDF
ISBN	9781424454167
DOI	10.1109/ICIMW.2009.5324632
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-09-21
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Infrared detectors Radiation detectors Stokes parameters Semiconductor lasers Photovoltaic effects Temperature distribution Bandwidth Optical polarization Piezoelectric polarization Azimuthal angle
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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