NDLI: The mechanisms of absorption in high-gap semiconductors at millimeter and submillimeter wavelengths

Content Provider	IEEE Xplore Digital Library
Author	Dutta, J.M. Yu, G. Tang, Y. Jones, C.R. Parshin, V.V. Garin, B. Polyakov, V.I.
Copyright Year	2007
Description	Author affiliation: Dept. of Phys., North Carolina Central Univ., Durham, NC (Dutta, J.M.; Yu, G.; Tang, Y.; Jones, C.R.)
Abstract	A material with very low loss as well as excellent thermal and mechanical properties is required to deliver megawatts of RF power through vacuum windows into the plasma vessel of the ITER fusion reactor. Efforts are being made to acquire the necessary experimental data and extend the available theoretical models to elucidate the predominate mechanisms of absorption for mm and sub-mm electromagnetic waves in high-gap semiconductors, especially CVD diamond and SiC, which are among the most promising low-loss materials commercially available. In order to identify the impurities or defects that give rise to the excess loss, temperature-dependent conductivity and DLTS measurements are being undertaken on SiC. Dielectric loss measurements over a wide range of temperatures are in progress to verify the results obtained from electrical methods and help to determine the primary loss mechanisms for SiC in the millimeter wave length range. Preliminary experimental results will be presented.
Starting Page	875
Ending Page	876
File Size	345925
Page Count	2
File Format	PDF
ISBN	9781424414383
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-09-02
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronic Engineers, Inc.
Subject Keyword	Absorption Dielectric loss measurement Silicon carbide Semiconductor materials Dielectric measurements Loss measurement Electromagnetic measurements Millimeter wave measurements Mechanical factors Radio frequency
Content Type	Text
Resource Type	Article

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