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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Champlain, J.G. Magno, R. Doewon Park Newman, H.S. Boos, J.B. |
| Copyright Year | 2007 |
| Description | Author affiliation: Naval Res. Lab., Washington, DC (Champlain, J.G.; Magno, R.; Doewon Park; Newman, H.S.; Boos, J.B.) |
| Abstract | Sb-based heterojunction bipolar transistors on semi-insulating GaAs at a = 6.2 Aring consisting of narrow bandgap, p-type $In_{0.27}Ga_{0.73}Sb$ and wide bandgap, n-type $In_{0.69}Al_{0.31}As_{0.41}Sb_{0.59}$ are demonstrated for the first time. The transistors exhibit excellent current-voltage characteristics. The individual diodes show good forward and reverse operation with saturation current densities and idealities for both the base-emitter and base-collector junctions of 7 $mA/cm^{2}$ and 1.3 and 14 $mA/cm^{2}$ and 1.25, respectively, and a reverse leakage current below 3 $A/cm^{2}$ (up to -3 V) for the base-collector junction. Additionally, the transistors display common-emitter current gains up to 20 with common-emitter breakdown voltages of approximately 3 V. |
| Starting Page | 855 |
| Ending Page | 856 |
| File Size | 1382801 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424414383 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-09-02 |
| Publisher Place | UK |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronic Engineers, Inc. |
| Subject Keyword | Diodes Frequency Photonic band gap Heterojunction bipolar transistors Gallium arsenide Current density Tellurium HEMTs MODFETs Current-voltage characteristics |
| Content Type | Text |
| Resource Type | Article |
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