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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Junqin Zhang Yintang Yang Hujun Jia Changchun Chai Hongfeng Zhu |
| Copyright Year | 2012 |
| Description | Author affiliation: Key laboratory of Wide Band-Gap Semiconductor Materials and devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an, China (Junqin Zhang; Yintang Yang; Hujun Jia; Changchun Chai; Hongfeng Zhu) |
| Abstract | The fabrication and characterization of 4H-SiC Schottky metal-semiconductor-metal(MSM) photodetectors are reported in this paper. The current-voltage(I-V), capacitance-voltage(C-V) and spectral response characterization of the photodetectors are measured at room temperature. The dark current is $1.24×10^{−8}A$ at 4V bias, and the average capacitance is 82.66pF at 0–5V voltage range. The spectral response range is from 250nm to 350nm wavelength, and the highest responsivity appears at the wavelength of 280nm. The results indicate that the 4H-SiC photodetectors are visible-blind. |
| Starting Page | 307 |
| Ending Page | 309 |
| File Size | 305113 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781467314107 |
| e-ISBN | 9781467314114 |
| DOI | 10.1109/CSIP.2012.6308855 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-08-24 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Metal-semiconductor-metal (MSM) Silicon Semiconductor diodes Epitaxial growth 4H-SiC Physics Ultraviolet(UV) photodetector |
| Content Type | Text |
| Resource Type | Article |
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