NDLI: Coupled numerical analysis of Suspended gate field effect transistor (SGFET)

Content Provider	IEEE Xplore Digital Library
Author	Jayaprakash Reddy., K. Malhi, Charanjeet Kaur Pratap, Rudra Bhat, Navakanta
Copyright Year	2012
Description	Author affiliation: Center for Nano Science & Engineering, IISc, Bangalore, Karnataka, India (Jayaprakash Reddy., K; Malhi, Charanjeet Kaur; Pratap, Rudra; Bhat, Navakanta)
Abstract	Suspended gate MOSFETs exist since last few decades. Resonant gate transistors were first demonstrated as a means of getting high Q devices [1]. The advantages of transistor based transduction as compared to the capacitive detection have also been demonstrated [2,3]. The behaviors of SGFETs have been studied using equivalent lumped parameter modeling methodology [4–7]. Numerical simulations involving “hybrid” FEA coupling between two different tools, ANSYS Multiphysics and ISE-DESIS, with the help of an external Perl script have also been tried [8]. Here ANSYS is used for the coupled electrostatic and structural physics calculations and ISE-DESIS provides the correct boundary conditions for the electrostatic domain using semiconductor physics. Another related study [9] solved the beam equation coupled with the Poisson equation numerically using finite difference and Newton Raphson method. Our work presents an easier modeling and analysis of a suspended gate MOSFET in COMSOL, successfully demonstrating a solution of a moving gate type device. In our analysis, we consider the air gap as a deformable continuum and we report the standard Id-Vg characteristics of the transistor. Commercially available packages such as ISE-DESIS specialize in only fixed gap analysis wherein air is also modeled as a material with a known permittivity. In such an analysis the capacitor formed due to the air gap remains fixed. We demonstrate here that this analysis can be easily carried out in COMSOL using its multiphysics features. Using two dimensional analysis involving structural mechanics domain, moving mesh ALE, convection and diffusion, and the electrostatics domain, the effect of moving gate and hence the moving air gap can be modeled and analyzed.
Starting Page	141
Ending Page	144
File Size	746386
Page Count	4
File Format	PDF
ISBN	9781467310406
e-ISBN	9781467310437
DOI	10.1109/ISPTS.2012.6260903
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-03-07
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Multiphysics MOSFET Atmospheric modeling Logic gates Suspended gate field effective transistor Mathematical model Finite element methods Electrostatics COMSOL FETs
Content Type	Text
Resource Type	Article

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2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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