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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Di Han Woongkul Lee Noppakunkajorn, J. Sarlioglu, B. |
| Copyright Year | 2014 |
| Description | Author affiliation: Wisconsin Electr. Machines & Power Electron. Consortium (WEMPEC), Univ. of Wisconsin-Madison, Madison, WI, USA (Di Han; Woongkul Lee; Noppakunkajorn, J.; Sarlioglu, B.) |
| Abstract | Silicon carbide (SiC) based devices are known to outperform Si devices in many aspects, such as lower power dissipation, higher operating temperatures, and higher switching frequencies. SiC devices will benefit hybrid vehicles when applied into the DC-DC converters and inverters as part of the electrical power conversion needed to drive the powertrain. Nevertheless, SiC devices can suffer from oscillations as a result of the underdamped response to an RLC circuit composed of device output capacitance, parasitic inductance, and on-state resistance. This paper aims at investigating the influence of the interconnection parasitic inductance on the performance of SiC-based DC-DC converter in hybrid vehicles. |
| Sponsorship | IEEE Ind. Appl. Soc. |
| Starting Page | 1 |
| Ending Page | 7 |
| File Size | 266783 |
| Page Count | 7 |
| File Format | |
| ISBN | 9781479922628 |
| DOI | 10.1109/ITEC.2014.6861850 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-06-15 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Performance evaluation MOSFET Integrated circuit interconnections Semiconductor loss Parasitic inductance Hybrid electric vehicles Vehicles Inductance DC-DC converters Silicon carbide Efficiency Logic gates Silicon carbide power devices |
| Content Type | Text |
| Resource Type | Article |
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