NDLI: Ion-sliced Lithium Niobate on silicon dioxide for engineering the temperature coefficient of frequency of Laterally Vibrating Resonators

Content Provider	IEEE Xplore Digital Library
Author	Shi, L. Piazza, G.
Copyright Year	2013
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA (Shi, L.; Piazza, G.)
Abstract	This paper presents a new Laterally Vibrating Resonator (LVR) based on Y-cut ion-sliced Lithium Niobate (LN) thin films on silicon dioxide $(SiO_{2}).$ In this work, the LN LVR is built on top of a $SiO_{2}$ layer and released from the underlying silicon wafer by dry etching in $XeF_{2}.$ For a given sample having a LN layer thickness of 420 nm and $SiO_{2}$ thickness of 1600 nm, this first demonstration yielded resonators with temperature coefficient of frequency (TCF) of + 17 ppm/°C, and + 18 ppm/°C for devices vibrating at 500 MHz, respectively oriented at 10 and 30 to the x-axis, and TCF of +24.1 ppm/°C, and +27.7 ppm/°C for devices vibrating at 750 MHz, respectively oriented at 40 and 50 to the x-axis. The positive TCF clearly indicates the effect of the $SiO_{2},$ matches with finite element method simulations and non-linear analysis, and offers evidence that TCF engineering is possible. Most importantly, these LN LVRs still exhibited high values of electromechanical coupling, $k_{t}^{2},$ around 9% at 723.7 MHz, and Q in excess of 1,320 in air at 419.3 MHz. By optimizing the relative values of the LN and $SiO_{2}$ thickness it is ultimately possible to attain devices with zero first order TCF.
Sponsorship	IEEE Ultrason., Ferroelectr., Freq. Control Soc.
Starting Page	417
Ending Page	420
File Size	687232
Page Count	4
File Format	PDF
DOI	10.1109/EFTF-IFC.2013.6702219
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-07-21
Publisher Place	Czech Republic
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Couplings Micromechanical devices Temperature measurement Lithium niobate Fingers Passive temperature compensation Resonant frequency Lithium niobate (LiNbO3) high coupling resonator Finite element analysis RF MEMS resonator Temperature coefficient of frequency (TCF)
Content Type	Text
Resource Type	Article

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