NDLI: Study of phase noise in VCXO with inversion-mode varactors

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2014 European Frequency and Time Forum (EFTF)

2013 Joint European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC)

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Proceedings of the 20th European Frequency and Time Forum

Study of phase noise in VCXO with inversion-mode varactors

Content Provider	IEEE Xplore Digital Library
Author	Yao Huang Kao Teh Chau Liau
Copyright Year	2013
Description	Author affiliation: Dept. of Commun. Eng., Chung Hua Univ., Hsinchu, Taiwan (Yao Huang Kao; Teh Chau Liau)
Abstract	Voltage controlled crystal oscillators (VCXO) using CMOS varactors are investigated. The varactor is operated in the so-called inversion mode (I-Mode) with source and drain bounded together. Its capacitance is evaluated by the HSPICS-Fourier methodology. The performances of capacitance under small-signal and large-signal operations are classified. Then the frequency tuning and the related phase noise are explored. It is found that the larger the tuning coefficient has, the worse the phase noise has in I-mode varactor. The chip is fabricated by the TSMC 0.35um CMOS process. The total area including pad is 1.358 × 1.350 mm and the current consumption in the core circuit is 300uA.
Sponsorship	IEEE Ultrason., Ferroelectr., Freq. Control Soc.
Starting Page	149
Ending Page	152
File Size	413700
Page Count	4
File Format	PDF
DOI	10.1109/EFTF-IFC.2013.6702047
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-07-21
Publisher Place	Czech Republic
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Varactors Phase noise Resistance Varactor Crystal Oscillator Inversion-mode Crystals Capacitance Frequency Control VCXO Tuning
Content Type	Text
Resource Type	Article

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