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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Mandhdapu, R. Samson Immanuel, J. |
| Copyright Year | 2012 |
| Description | Author affiliation: Dept. of ECE, Karunya University, Coimbatore, India (Mandhdapu, R.; Samson Immanuel, J.) |
| Abstract | Spin-torque transfer (STT) programming is a promising, maturing, non-volatile memory technology for future memory applications. When a sufficient current density passes through the MTJ, the spin polarized current will exert a spin transfer torque to switch the magnetization of the free layer. This is the fundamental of the write mechanism in STT-RAM, current induced magnetization switching. It allows STT-RAM to have a smaller cell size and write current than MRAM.The new MRAM cell structure design can realize high speed and reliable sensing operations in the presence of relatively poor magnetoresistive ratio, while maintain the low sensing current through the magnetic tunnellingjunctions (MTJs). The effectiveness of the proposed RAM structure was demonstrated by circuit simulation at 0.18µm CMOS technology using Mentor Graphics tool. |
| Starting Page | 513 |
| Ending Page | 517 |
| File Size | 1037670 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781467302135 |
| e-ISBN | 9788190904223 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-03-30 |
| Publisher Place | India |
| Access Restriction | Subscribed |
| Rights Holder | Pillay Engineering College |
| Subject Keyword | Spin torque transfer (STT) magnetoresistive memory Logic gates Magnetoresistive random access memory (MRAM) Magnetic tunneling Magnetic tunneling junction (MTJ) |
| Content Type | Text |
| Resource Type | Article |
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