NDLI: Realization of Magnetic RAM using Magnetic Tunneling Junction in atomic level

Content Provider	IEEE Xplore Digital Library
Author	Dason, I.B.M. Kumar, V.R. Kirubaraj, A.A.
Copyright Year	2011
Description	Author affiliation: ECE Department, Karunya University, Coimbatore - 641 114, India (Dason, I.B.M.; Kumar, V.R.; Kirubaraj, A.A.)
Abstract	Magnetic RAM (MRAM) is the non-volatile memory device with excellent endurance. Magnetic Tunneling Junction (MTJ) is the basic building block of the MRAM which is used to store information extracting the two-valued resistance property. With the discovery of Giant Magneto Resistance effect (GMR) and Tunnel Magneto Resistance effect (TMR) phenomenon in the magnetic multilayer of MTJ, the difference between the two resistances is distinct. Writing in MTJ can be carried with superior speed, low power using Spin Transfer Torque (STT) writing technique. The parallel and anti-parallel configurations of the MTJ can be carried out by manipulating the spin of the electrons of the magnetic multilayer. In this paper, we have modelled the Fe-MgO-Fe MTJ in atomic level using the software Atomistix ToolKit (ATK) Virtual NanoLab (VNL) 2008.10. We have analysed the V-I characteristics of the MTJ for the various bias voltages and have obtained the resistance of 5.2 MΩ and 55.7 MΩ for the parallel and anti-parallel configurations respectively. This difference in the two resistances holds good to differentiate the data ‘0’ or ‘1’ stored in the MTJ. The TMR thus calculated is around 950%. Higher the TMR ratio lower is the Resistance Area (RA) product.
Starting Page	397
Ending Page	401
File Size	606867
Page Count	5
File Format	PDF
ISBN	9781424486786
e-ISBN	9781424486793
DOI	10.1109/ICECTECH.2011.5941929
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-04-08
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resistance Electrodes Tunnel Magneto Resistance effect (TMR) Magnetic multilayers Magnetic Tunneling Junction (MTJ) Giant Magneto Resistance effect (GMR) Spin Transfer Torque (STT) Tunneling magnetoresistance Junctions Magnetic RAM (MRAM) Magnetic tunneling
Content Type	Text
Resource Type	Article

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