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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Joseph, J.S. Shukla, R. Niranjan, V. |
| Copyright Year | 2015 |
| Description | Author affiliation: Dept. of Electron. & Commun. Eng., Indira Gandhi Delhi Tech. Univ. for Women, Delhi, India (Joseph, J.S.; Shukla, R.; Niranjan, V.) |
| Abstract | In this paper, a low voltage Schmitt trigger has been designed using various low voltage MOS transistor implementation techniques namely-Dynamic Threshold MOS (DTMOS), Multiple threshold MOS (MTMOS), Variable threshold MOS (VTMOS) and Floating gate MOS (FGMOS). The conventional and proposed circuits are designed in 180nm CMOS technology from TSMC and simulated at 0.5 Volts. The comparative study of the performance of proposed Schmitt triggers in terms of width of the hysteresis curve, delay introduced and power dissipation for same inputs and supply voltages has been done and based on the results obtained, application for each Schmitt trigger has been suggested. |
| Starting Page | 1 |
| Ending Page | 5 |
| File Size | 426680 |
| Page Count | 5 |
| File Format | |
| e-ISBN | 9781467372312 |
| DOI | 10.1109/ICRITO.2015.7359347 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-09-02 |
| Publisher Place | India |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | VTMOS MOSFET Schmitt Trigger DTMOS Logic gates Threshold voltage CMOS integrated circuits Power dissipation FGMOS Hysteresis MTMOS |
| Content Type | Text |
| Resource Type | Article |
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