NDLI: Raman amplification in SOI based slow light waveguides

Content Provider	IEEE Xplore Digital Library
Author	Sharma, A.K. Ghunawat, A.K.
Copyright Year	2015
Description	Author affiliation: Dept. of ECE, Malaviya Nat. Inst. of Technol., Jaipur, India (Sharma, A.K.; Ghunawat, A.K.)
Abstract	This paper is devoted to analyze amplification properties of silicon waveguides with an Emphasize on geometry optimization using recently derived Nonlinear Schrodinger equations. As Nonlinear Schrodinger equations are best suitable theoretical model to investigate behavior of optical wave propagating through silicon waveguides. As Raman amplification inside slow light waveguides has been demonstrated recently as key technology to enhance nonlinear effects; these waveguides deserve further investigation. Here we present the theoretical study of continuous-wave Raman amplification in slow light waveguides using recently derived generalized nonlinear Schrodinger equations. For slow light waveguides maximum signal intensity and optimal waveguide length strongly depend on geometry of the waveguide. So we observe how maximum signal intensity and optimal waveguide length varies with geometry of waveguide and find best suitable geometry to achieve maximum amount of amplification and corresponding optimal length of waveguide. This study is useful for selection of appropriate geometry and input condition in the Raman amplification based devices.
Starting Page	1
Ending Page	6
File Size	430203
Page Count	6
File Format	PDF
e-ISBN	9781467372312
DOI	10.1109/ICRITO.2015.7359334
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-09-02
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	TPA FCA Raman Amplification Slow light Waveguide
Content Type	Text
Resource Type	Article

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