NDLI: 2DEG behavior of AlGaN/GaN HEMTs on various transition buffers

Content Provider	IEEE Xplore Digital Library
Author	Singh, M. Mohan, N. Soman, R. Chandrasaker, H. Raghavan, S.
Copyright Year	2014
Description	Author affiliation: Centre for Nano Sci. & Eng., Indian Inst. of Sci., Bangalore, India (Singh, M.; Soman, R.; Raghavan, S.) \|\| Mater. Res. Centre, Indian Inst. of Sci., Bangalore, India (Mohan, N.; Chandrasaker, H.)
Abstract	We are reporting the 2DEG mobility and sheet carrier concentration behavior of AlGaN/GaN HEMT stacks that are grown on different kinds of transitions from AlN buffer to epi-GaN. The role of each transition in terms of interfacial roughness and epi-GaN crystallinity are discussed. Further, the observed material parameters are correlated with the HEMT 2DEG property. Enhancement in 2DEG mobility was observed from the stacks those exhibit low surface roughness irrespective of the scattering seen in HRXRD FWHMs. This results show that other than the dislocation reduction and crack free film, the low surface roughness is essential for a better confinement of 2DEG and an optimum carrier concentration.
Starting Page	1
Ending Page	4
File Size	206615
Page Count	4
File Format	PDF
ISBN	9781467365277
e-ISBN	9781467365284
DOI	10.1109/ICEmElec.2014.7151163
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-12-03
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	HEMT on Si 2DEG Effect of surface roughness Transition layers HEMTs Surface roughness Wide band gap semiconductors Rough surfaces MODFETs Gallium nitride Aluminum gallium nitride AlGaN-GaN HEMT
Content Type	Text
Resource Type	Article

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