NDLI: Growth mechanism and electron spin resonance studies of Zn1−xNixO/NiO two-phase nanocomposite

Content Provider	IEEE Xplore Digital Library
Author	Joshi, D.C. Harish, D.D. Nayak, S. Roy, D. Qureshi, M. Saiprasad, R.L.N. Shiyani, T. Pamu, D. Thota, S.
Copyright Year	2014
Description	Author affiliation: Dept. of Phys., Nat. Inst. of Technol. Warangal, Warangal, India (Saiprasad, R.L.N.) \|\| Dept. of Electr. Eng., Indian Inst. of Technol. Guwahati, Guwahati, India (Roy, D.) \|\| Dept. of Phys., Indian Inst. of Technol. Guwahati, Guwahati, India (Joshi, D.C.; Harish, D.D.; Nayak, S.; Pamu, D.; Thota, S.) \|\| Dept. of Phys., Pandit Deendayal Pet. Univ., Raisan, India (Shiyani, T.) \|\| Dept. of Chem., Indian Inst. of Technol. Guwahati, Guwahati, India (Qureshi, M.)
Abstract	Two-phase nanocomposites comprised of $Zn_{1-x}Ni_{x}O/NiO$ (0.05 ≤ x ≤ 0.3) were grown by using sol-gel process with hydrated metal acetates as precursors. Thermal decomposition of the co-precipitated oxalate $α-ZnNi(C_{2}O_{4})$ yields wurtzite h.c.p. $Zn_{1-x}Ni_{x}O$ and f.c.c. NiO together. The X-band electron spin resonance spectra provide the signatures of anisotropic spin interactions with long-range magnetic ordering at 300 K. The temperature variation (120 K ≤ T ≤ 300 K) of the resonance field $H_{R}(T)$ and line-width $ΔH_{PP}(T)$ depicts a clear anomaly across 140 K associated with the blocking/freezing effects and the contribution of additional surface anisotropy $(K_{eff})$ present in the system. Both $H_{R}(T)$ and $ΔH_{PP}(T)$ follows the power-law variation $δH_{R}$ = $(ΔH_{PP})^{n}$ with n ≃ 2.13, as expected for partially oriented nanocrystallites.
Starting Page	1
Ending Page	4
File Size	1869261
Page Count	4
File Format	PDF
ISBN	9781467365277
e-ISBN	9781467365284
DOI	10.1109/ICEmElec.2014.7151180
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-12-03
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Anisotropic magnetoresistance II-VI semiconductor materials Magnetic resonance Wide band-gap semiconductor Zinc oxide Nickel Perpendicular magnetic anisotropy Lande's g-splitting factor Electron-Spin-Resonance Nano-composite
Content Type	Text
Resource Type	Article

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