NDLI: Plenary talk - strain engineering for improvement in Jc and Hirr and Hc2 in MgB2

Content Provider	IEEE Xplore Digital Library
Author	Dou, S.X. De Silva, S. Xu, X. Zeng, R. Li, W.X. Kim, J.H. Wang, X.L. Rindfleisch, M. Tomsic, M.
Copyright Year	2011
Description	Author affiliation: Hyper Tech Research Inc, Troy, Ohio, USA (Rindfleisch, M.; Tomsic, M.) \|\| Institute for Superconducting and Electronic Materials, Innovation Campus, University of Wollongong, Square Way, North Wollongong, NSW 2522, Australia (Dou, S.X.; De Silva, S.; Xu, X.; Zeng, R.; Li, W.X.; Kim, J.H.; Wang, X.L.)
Abstract	An alternative mechanism for improvement of Jc has been reported by the author's group in SiC-MgB2 composite which was made by pre-mixing SiC and B, followed by Mg diffusion and reaction. In contrast to the common practice of improving the Jc, and Hc2 of MgB2 through chemical substitution, it shows only a small decrease in the critical temperature, Tc, and little increase in resistivity, ρ. The further analysis indicated that, there is no SiC decomposition and C substitution, the enhancement of properties is induced by thermal strain caused by the different thermal expansion coefficients (α) of the MgB2 and SiC phases for SiC-MgB2 composite. The thermal strain in the MgB2 phase was demonstrated with x-ray diffraction, Raman spectroscopy, and transmission electron microscopy. By taking advantage of residual thermal strains, we are able to design a composite with only a small decrease in Tc, and little increase in ρ, but a significant improvement in Jc and Hc2. The strain engineering was applied to the grapheme doping to MgB2 where graphene has low to negative thermal expansion coefficient. It was found that the graphene doping at even 1% level achieved the optimally Jc(H) performance $(1×10^{4}$ $A/cm^{2}$ at 5 K, 8 T), compared to the level for other carbon containing dopants at 5–10% level. The upper critical field has been enhanced to 13 T at 20 K for the optimal doping level. Another unique feature for grapheme doping is the very low resistivity, good grain connectivity in low field range and following δT pinning rather than δl for near all doped MgB2. The Raman studies show that the active E2g mode was split into two parts: the softened mode corresponding to tensile strain and the hardened mode attributed to the carbon substitution effect.
Starting Page	286
Ending Page	287
File Size	154183
Page Count	2
File Format	PDF
ISBN	9781424478521
e-ISBN	9781424478538
DOI	10.1109/ASEMD.2011.6145120
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-12-14
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal expansion Silicon carbide Awards activities Doping Materials Educational institutions Strain
Content Type	Text
Resource Type	Article

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