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Nanoscale-SiC doping for enhancing Jc and Hc2 in the Superconducting MgB2
| Content Provider | arXiv |
|---|---|
| Author | Dou, S. X. Braccini, V. Soltanian, S. Klie, R. Zhu, Y. Li, S. Wang, X. L. Larbalestier, D. |
| Date of Submission | 2003-08-13 |
| Abstract | The effect of nanoscale-SiC doping of MgB2 was investigated using transport and magnetic measurements. It was found that there is a clear correlation between the critical temperature Tc, the resistivity r, the residual resistivity ratio, RRR = R(300K)/R(40K), the irreversibility field H* and the alloying state in the samples. SiC-doping introduced many nano-scale precipitates, provoking an increase of r(40K) from 1 mW-cm (RRR = 15) for the clean limit sample to 300 mW-cm (RRR = 1.75) for the SiC-doped sample, leading to significant enhancement of Hc2 and H* with only minor effect on Tc. EELS analysis revealed a number of nano-scale impurity phases: Mg2Si, MgO, MgB4, BOx, SixByOz, BC and unreacted SiC in the doped sample. TEM study showed an extensive domain structure of 2-4nm domains induced by SiC doping. The Jc for the 10% nano-SiC doped sample increased substantially at all fields and temperatures compared to the undoped samples, due to the strong increase in Hc2 and H* produced by SiC doping. |
| Related Links | https://arxiv.org/pdf/cond-mat/0308265.pdf |
| arXiv | cond-mat/0308265 |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Condensed Matter - Superconductivity Condensed Matter |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics |
