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Content Provider | IEEE Xplore Digital Library |
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Author | Ahmed, M.A. Chrzanowska-Jeske, M. |
Copyright Year | 2013 |
Abstract | 3D-IC design facilitates reduction in wirelength by vertically stacking dies. Through-silicon-vias (TSVs) are used to connect inter-die signals. The dynamic power consumption of interconnects in 3D-IC is contributed by wires, buffers and TSVs. The delay in interconnects for 3D-IC is greatly influence by TSV capacitance. In this paper we propose TSV capacitance-aware 3D floorplanning to reduce the delay and dynamic power consumption in 3D-interconnects. The TSVs with specified dimensions and pitch are positioned in islands. TSV islands offer advantages over individual TSVs like reduced stress impact and more efficient inclusion of redundancy. TSV capacitance depends on TSV dimensions, pitch and wire technology. TSV capacitance aware floorplanning reduces power consumption in interconnects on average by 7% when using Cu-TSVs and 9% for W-TSVs. The approach also reduces peak delay for nets using Cu based TSVs on average by 15% and W based TSVs by 21%. |
Sponsorship | IEEE Components, Pack., Manuf. Technol. Soc. |
Starting Page | 1 |
Ending Page | 6 |
File Size | 613725 |
Page Count | 6 |
File Format | |
ISBN | 9781467364843 |
DOI | 10.1109/3DIC.2013.6702358 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2013-10-02 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Power demand Three-dimensional displays Interconnect Power Wires Integrated circuit interconnections 3D-IC Floorplanning Capacitance Delays Through-silicon vias Through-Silicon-Vias (TSVs) |
Content Type | Text |
Resource Type | Article |
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