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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lo, S.-H. Lee, C.-P. |
| Copyright Year | 1989 |
| Description | Author affiliation: Inst. of Electron., Nat. Chiao Tung Univ., Hsin Chu, Taiwan (Lo, S.-H.; Lee, C.-P.) |
| Abstract | The stress-induced orientation effects in self-aligned GaAs MESFETs have been studied using a two-dimensional analysis. Devices oriented along different crystal directions, with different gate lengths and under different stress conditions, were studied. It was found that the piezoelectric effect caused by the surface stress plays a very important role in the device characteristics of short-channel self-aligned MESFETs. The short-channel effects can be suppressed and the device performance improved if the devices are oriented in the right direction and the thickness and the stress of the surface dielectric layer are properly chosen.<> |
| Starting Page | 281 |
| Ending Page | 284 |
| File Size | 383401 |
| Page Count | 4 |
| File Format | |
| DOI | 10.1109/GAAS.1989.69343 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1989-10-22 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Compressive stress Difference equations Gallium arsenide Piezoelectric effect Dielectric substrates MESFETs Threshold voltage Capacitive sensors FETs Electrons |
| Content Type | Text |
| Resource Type | Article |
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