NDLI: Frequency-dependent transients in GaAs MESFETs: process, geometry and material effects

Content Provider	IEEE Xplore Digital Library
Author	Mickanin, W. Canfield, P. Finchem, E. Odekirk, B.
Copyright Year	1989
Description	Author affiliation: TriQuint Semicond. Inc., Beaverton, OR, USA (Mickanin, W.; Canfield, P.; Finchem, E.; Odekirk, B.)
Abstract	Transient aberrations have long been observed in GaAs MESFETs. The authors report on the magnitude of current transients that occur when a voltage step is applied to the drain of a device. A simple measurement technique that was applied to both enhancement and depletion mode devices is described. The overshoot as a function of bias condition (from subthreshold to saturation), drain pulse input frequency, substrate temperature, and device contact spacing were measured. The results show that the current overshoot grows with increasing drain voltage step magnitude and temperature, lighter channel doping, lower standing current, smaller gate-drain spacing, and larger gate-source spacing. Beryllium p-well implants also increase the overshoot significantly. The magnitude of the aberrations can grow to ten times the quasi-static pulse amplitude at frequencies in the 10 Hz range. Surface preparation and dielectrics are shown to have minimal effects on the problem. It is indicated that charge trapping in the channel-substrate region is the chief cause of the current overshoot.<>
Starting Page	211
Ending Page	214
File Size	413415
Page Count	4
File Format	PDF
DOI	10.1109/GAAS.1989.69328
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-10-22
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Geometry Temperature Pulse measurements Gallium arsenide Voltage Measurement techniques Doping Implants MESFETs Frequency measurement
Content Type	Text
Resource Type	Article

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