NDLI: Effects of Capacitive and Inductive Coupling on Interconnects at RF Frequencies

Content Provider	IEEE Xplore Digital Library
Author	Parashar, H. Singh, G.
Copyright Year	2011
Abstract	In this paper, we have investigated a circuit model of the on-wafer interconnects for high-speed CMOS integrated circuits (ICs). Along with increasing the operating frequency, there are various factors like chip size, circuit density, complexity, cost and delay which make interconnects an important issue that has to be considered while designing ICs. At GHz frequencies, long interconnect wires exhibit transmission line behaviour and also traditional lumped and distributed RC models of interconnects are no longer accurate and result in substantial errors in predicting delay and crosstalk. Therefore, a RLC circuit model of interconnects is consider in this work, which takes into account the effects inductance also. Two coupled interconnects are used to show the effects of both capacitive and inductive coupling. The coupled circuit model is studied in terms of S-parameters namely, S11 and S21, which gives return loss and insertion loss, respectively. The proposed circuit model is simulated by using the Advanced Design System 2005A (ADS) by Agilent Technologies. These parameters are obtained for different cases considering both types of coupling collectively and individually.
Starting Page	1
Ending Page	5
File Size	245923
Page Count	5
File Format	PDF
ISBN	9781424491896
e-ISBN	9781424491902
DOI	10.1109/ICDECOM.2011.5738504
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-02-24
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Couplings Solid modeling Inductance Integrated circuit interconnections RLC circuits Scattering parameters Integrated circuit modeling
Content Type	Text
Resource Type	Article

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