NDLI: Hot spotting and second breakdown effects on reverse I-V characteristics for mono-crystalline Si Photovoltaics

Content Provider	IEEE Xplore Digital Library
Author	Kim, K.A. Krein, P.T.
Copyright Year	2013
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA (Kim, K.A.; Krein, P.T.)
Abstract	Hot spots are a common problem in photovoltaic (PV) panels that accelerate cell degradation and reduce system performance. Hot spots occur when a cell is reversed biased, sinks power, and heats the cell. At a certain threshold, the PV p-n junction goes into second breakdown and heats a small portion of the cell to very high temperatures. This study experimentally tests mono-crystalline Si cells as they hot spot at different power levels. Heating effects on the I-V characteristics during hot spotting and permanent changes after seven days of hour-long hot spot tests are observed and analyzed. I-V characteristics are significantly affected under second breakdown, which is observed when cells are reverse-biased above two times the rated maximum power level.
Starting Page	1007
Ending Page	1014
File Size	936248
Page Count	8
File Format	PDF
ISBN	9781479903368
DOI	10.1109/ECCE.2013.6646813
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Degradation Temperature Electric breakdown Heating Silicon Acceleration
Content Type	Text
Resource Type	Article

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Hot spotting and second breakdown effects on reverse I-V characteristics for mono-crystalline Si Photovoltaics