NDLI: Modeling of internal transparent collector IGBTs and the extraction of electron lifetime in nano-voids layer

Content Provider	IEEE Xplore Digital Library
Author	Hu, D.Q. Wu, Y. Kang, B.W. Jia, Y.P. Sin, J.K.O.
Copyright Year	2009
Description	Author affiliation: Dept. of Electronics and Computer Engineering, The Hong Kong University of Sci. & Tech., Clear Water Bay, Kowloon, China (Sin, J.K.O.) \|\| Dept. of Electronic Sci. & Tech., Beijing University of Technology, 100, Pingleyuan, Chaoyang District, China (Hu, D.Q.; Wu, Y.; Kang, B.W.; Jia, Y.P.)
Abstract	A new type of insulated gate bipolar transistor (IGBT)—internal transparent collector (ITC) IGBT is proposed. It is quite similar to that of the PT-IGBT, but a very low carrier lifetime control region is introduced in the P+ substrate near the p-collector/n-buffer junction. Based on quasi-static hypothesis, the ITC-IGBTs' static characteristic equations are given. The turn-off equations are also derived on base of non-quasi-static analysis. The model is used to our fabricated device structure and the results fit well to the experiment results. Based on the relationship of Von and local carrier lifetime, electron lifetime in carrier lifetime control region is deduced. They are at range of 0.2–30 nanoseconds. The static performance as well as turn-off loses of ITC-IGBT is compared to PT- and FS-IGBT. The ITC-IGBT shows good potential for 600V IGBT applications.
Starting Page	3948
Ending Page	3953
File Size	554613
Page Count	6
File Format	PDF
ISBN	9781424428939
DOI	10.1109/ECCE.2009.5316183
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-09-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Buffer layers Temperature IGBT Doping Electron mobility Charge carrier processes Threshold voltage Helium Charge carrier lifetime Equations Transparent collector
Content Type	Text
Resource Type	Article

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