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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yongqin Hao Guojun Liu Yuan Feng Lifeng Hou Changling Yan Yingjie Zhao Yuxia Wang |
| Copyright Year | 2010 |
| Description | Author affiliation: National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, China (Yongqin Hao; Guojun Liu; Yuan Feng; Lifeng Hou; Changling Yan; Yingjie Zhao; Yuxia Wang) |
| Abstract | A new device structure is reported to improve performance of vertical cavity surface-emitting lasers (VCSELs). Namely many cylindrical holes (CH) or noncontiguous ring trench (NRT) are etched instead of the conventional ring trench (RT). The mesa with such new structure offers radial bridges for current injection, the connecting Ti-Au metal between ohmic contact and bonding pad does not have to cross the ring trench, and it would not cause the connecting metal broken. The 850nm VCSELs with CH have a light output power higher than 10 mW and have a maximum of 12.5 mW at 29.6 mA, 1.34 times as much as those with RT. And the 980nm VCSELs with NRT have a maximum light output power of 28.8 mW at 49.5 mA, 1.6 times as much as those with RT. In addition, these new structure VCSELs also show high-temperature operation characteristics. |
| Starting Page | 93 |
| Ending Page | 95 |
| File Size | 666498 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424455119 |
| e-ISBN | 9781424455133 |
| DOI | 10.1109/RCSLPLT.2010.5615393 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-07-28 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Quantum well Temperature Ring trench(RT) Cavity resonators Laser beams Vertical cavity surface emitting lasers Power generation Vertical-cavity surface-emitting laser Semiconductor laser |
| Content Type | Text |
| Resource Type | Article |
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