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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Gaffney, M.S. Smith, R.S. Holmes Jr., A.L. Reaves, C.M. DenBaars, S.P. |
| Copyright Year | 1995 |
| Description | Author affiliation: Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA (Gaffney, M.S.; Smith, R.S.; Holmes, A.L., Jr.) |
| Abstract | Metalorganic chemical vapor deposition (MOCVD) is a promising technology for the fabrication of high speed electronic and opto-electronic devices. Commercial application of this technique is limited by a high degree of process variance. This paper describes work in progress on the development of a closed loop MOCVD facility for GaAs device fabrication. Critical system disturbances, which degrade the growth rate uniformity and reproducibility, and subsequent device performance, are identified. A control system is designed and implemented to regulate the supply of gallium to the reactor. The controller performance is investigated by growing GaInAs/InP superlattices. Post-growth tests clearly illustrate that the compensated samples have better precision in alloy composition and thickness. |
| Starting Page | 2490 |
| Ending Page | 2495 |
| File Size | 643123 |
| Page Count | 6 |
| File Format | |
| ISBN | 0780326857 |
| ISSN | 01912216 |
| DOI | 10.1109/CDC.1995.478465 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-12-13 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thickness control III-V semiconductor materials Epitaxial growth MOCVD Fabrication Chemical vapor deposition Chemical technology High-speed electronics Optoelectronic devices Gallium arsenide |
| Content Type | Text |
| Resource Type | Article |
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