NDLI: High performance RF-filters suitable for above IC integration: film bulk-acoustic- resonators (FBAR) on silicon

Content Provider	IEEE Xplore Digital Library
Author	Aigner, R.
Copyright Year	2003
Description	Author affiliation: Secure Mobile Solutions, Infineon Technol. AG, Munich, Germany (Aigner, R.)
Abstract	The fundamentals of bulk-acoustic-wave (BAW) devices and the performance of state-of-the-art film bulk-acoustic-resonator (FBAR) filters is reviewed. The key role that high performance RF-filters play in handset applications is discussed and the benefit of silicon technologies outlined. Key processes in manufacturing of FBARs are briefly reviewed. The appealing simplicity of filter modeling and design is presented. Monolithic integration of "system-on-chip" together with RF-ICs is technically feasible and has been demonstrated. Conditions under which this will commercially make sense as compared to hybrid integration "system-in-package" is discussed. Examples of state-of-the-art in BAW filters in production and ramp-up status are presented.
Sponsorship	IEEE Solid-State Circuits Soc. IEEE Electron Devices Soc
Starting Page	141
Ending Page	146
File Size	415070
Page Count	6
File Format	PDF
ISBN	0780378423
DOI	10.1109/CICC.2003.1249378
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-09-24
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Film bulk acoustic resonators Semiconductor films Silicon Mobile handsets Preamplifiers GSM Resonator filters Monolithic integrated circuits Radio frequency Manufacturing
Content Type	Text
Resource Type	Article

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