NDLI: The effect of oxygen on the barium titanate film capacitor

Content Provider	IEEE Xplore Digital Library
Author	Bang-Hung Tsao Wu, R.L.C. Carr, S.F. Weimer, J.A.
Copyright Year	1997
Description	Author affiliation: K Syst. Corp., Dayton, OH, USA (Bang-Hung Tsao)
Abstract	Thin BaTiO/sub 3/ film (5000 Angstroms) capacitor devices were fabricated by using RF sputtering techniques and applying various levels of oxygen-rich environments (0% to 20%). In this study, the gas compositions were specifically 100% Ar and the variations of oxygen content were 1%, 3%, 5%, 10%, 15% and 20%. The dielectric constant was measured in the range of 13 to 19 for the as-deposited samples. For the samples annealed at 750/spl deg/C in argon for half an hour, the dielectric constant of BaTiO/sub 3/ films increased as much as a 2 to 3X. It was also observed that the higher the total pressure, the lower the deposition rate was. The addition of the 5% oxygen apparently decreases the deposition rate. The capacitance of BaTiO/sub 3/ film capacitors produced to-date have little dependence on frequency from 400 Hz to 100 kHz. These film capacitors also exhibited reasonable low dissipation factor (0.005) before annealing and moderate dissipation factor (0.01) after annealing. The resistivity of these films were in the range of 10/sup 12/ to 10/sup 14/ ohm-cm. Thermal cycling in the temperature range of 50 to 250/spl deg/C had little impact on the capacitance and dissipation factor. Measurements of dielectric, thermal, and material properties are presented concerning this study.
Starting Page	323
Ending Page	328
File Size	871286
Page Count	6
File Format	PDF
ISBN	0780345150
DOI	10.1109/IECEC.1997.659207
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-07-27
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Barium Titanium compounds Capacitors Annealing Argon Dielectric constant Dielectric measurements Capacitance Dielectric thin films Radio frequency
Content Type	Text
Resource Type	Article

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