NDLI: Low temperature processed lead zirconate titanate (PZT) film as dielectric for capacitor applications

Content Provider	IEEE Xplore Digital Library
Author	Bang-Hung Tsao Heidger, S. Weimer, J.A.
Copyright Year	2000
Description	Author affiliation: Res. Inst., Dayton Univ., OH, USA (Bang-Hung Tsao)
Abstract	Thin PZT film is being developed for use in microelectronics, electromechanical and optoelectronic applications. Thin Pb(ZrTi)O/sub 3/ film capacitor devices were fabricated using RF sputtering techniques. The multiple-layer configuration of Si/SiO/sub 2//Ti/Pt was used as the substrate and bottom electrode. The top electrode was Pt. At 1 kHz, the dissipation factor (tangent loss) of PZT film capacitors processed at 100/spl deg/C was 8.35%. However the dissipation factor of PZT film capacitor processed at 60/spl deg/C was only 0.35%. The dielectric constant was calculated to be 32 at 1 kHz. After annealing at 400/spl deg/C, the dielectric constant increased about 33% to 43. The dielectric constant increased to 165 after annealing at 500/spl deg/C and to 1143 after annealing at 600/spl deg/C. The PZT film capacitors produced to-date had little dependence on frequency from 20 Hz to 100 kHz. The frequency dependence increased with increasing annealing temperature from 400/spl deg/C to 600/spl deg/C. Lowering the processing temperature from 100/spl deg/C to 60/spl deg/C resulted in a tremendous decrease in the dissipation factor from 8.3% to 0.35%.
Starting Page	560
Ending Page	567
File Size	833518
Page Count	8
File Format	PDF
ISBN	0780362624
DOI	10.1109/NAECON.2000.894961
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-10-12
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Titanium compounds Capacitors Annealing Dielectric constant Electrodes Microelectronics Lead Radio frequency Sputtering
Content Type	Text
Resource Type	Article

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