NDLI: Au/Mn5Ge3/n-Ge(111) Schottky barrier characteristics from I-V-T and C-V-T data

Content Provider	IEEE Xplore Digital Library
Author	Sellai, A. Vinh Le thanh Petit, M. Michez, L. Ouennoughi, Z. Mesli, A.
Copyright Year	2012
Description	Author affiliation: Department of Physics, P.O Box 36, Sultan Qaboos University 123, Sultanate of Oman (Sellai, A.) \|\| Laboratoire optoélectronique et composants, Département de physique UFAS Sétif, Algérie (Vinh Le thanh) \|\| Centre Interdisciplinaire de Nanoscience de Marseille, (CINaM-CNRS 3118), Aix-Marseille Université, Campus Luminy, Case 913, 13288 Marseille cedex 9, France (Petit, M.; Michez, L.; Ouennoughi, Z.) \|\| IM2NP, UMR 6242 CNRS, Aix-Marseille University, Av. Normandie-Niemen, 13397 Marseille Cedex 20, France (Mesli, A.)
Abstract	I-V and C-V measurements performed on Au/Mn5Ge3/n-Ge structures, prepared for spintronic applications, are presented and analysed over a wide range of temperatures (50 K–300 K) with the goal of elucidating the prevailing conduction mechanism(s). The effects of image force lowering and recombination in the depletion region on the measured current are shown to be of little significance and cannot acceptably explain the drawbacks that arise when a pure thermionic emission model is used in analyzing the temperature dependence of the obtained electrical characteristics. Considering, however, the eventual contribution of thermally assisted tunneling to the current generating mechanism could explain the departure from pure thermionic emission. Thermionic field emission seems indeed to explain better our I-V data and the temperature dependence of related parameters. Also, the C-V measurements reveal a nonuniform carrier distribution with manifest peaks in the doping profile, possibly signifying the existence of charge accumulation and trap centers.
Starting Page	179
Ending Page	182
File Size	487777
Page Count	4
File Format	PDF
ISBN	9781467307826
ISSN	21588473
e-ISBN	9781467307840
DOI	10.1109/MELCON.2012.6196408
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-03-25
Publisher Place	Tunisia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Thermionic emission Tunneling Radiative recombination Temperature distribution Schottky diodes spintronic devices electrical characteristics conduction mechanism
Content Type	Text
Resource Type	Article

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