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Temperature Dependence of I-V Characteristics of Au/n-Si Schottky Barrier Diode
| Content Provider | CiteSeerX |
|---|---|
| Author | Sharma, Rajinder |
| Abstract | Abstract: The current-voltage characteristics of Au/n-Si Schottky barrier diodes were measured in a wide temperature range of 70-310 K. The forward current-voltage characteristics have been analyzed on the basis of standard thermionic emission (TE) theory and assuming Gaussian distribution (single) of barrier height. Findings are investigated to explore TFE-mechanism with high value of characteristic energy. The high values of ideality factor are analysed for interfacial layer and density of interface state. The temperature dependence of ideality factor was found to obey the “To-effect ” and the true barrier height (φbη) obtained is almost independent of temperature. For an ideal Schottky diode, the current flow is only due to thermionic emission mechanism and the ideality factor should be equal to unity (η=1). However, due to various |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Au N-si Schottky Barrier Diode Temperature Dependence I-v Characteristic Ideality Factor High Value True Barrier Height Thermionic Emission Mechanism Current Flow Interface State Interfacial Layer Wide Temperature Range Gaussian Distribution Barrier Height Forward Current-voltage Characteristic Current-voltage Characteristic Characteristic Energy Standard Thermionic Emission Ideal Schottky Diode |
| Content Type | Text |
| Resource Type | Article |