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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Dobes, J. Pospisil, L. |
| Copyright Year | 2006 |
| Description | Author affiliation: Dept. of Radio Eng., Czech Tech. Univ., Prague (Dobes, J.; Pospisil, L.) |
| Abstract | Nowadays, there are many various microwave structures for which their nonlinear models for CAD are necessary. However, in the recent PSpice family programs, only a class of five types of MESFET model is available. In the paper, a way is suggested for modeling miscellaneous microwave structures by exclusive neural networks, or corrective neural networks working attached to an updated analytic model. The accuracy of both procedures is assessed by extracting model parameters in static and dynamic domains: first, an approximation of the AlGaAs/InGaAs/GaAs pHEMT output characteristics is carried out by the corrective neural network; and second, an approximation of the capacitance function of the InGaAs/InP avalanche photodiode is performed by the exclusive neural network. A sequence of analyses is also performed for determining optimal structure of the artificial neural network |
| Sponsorship | IEEE Region 8 IEEE Spain Sect |
| Starting Page | 149 |
| Ending Page | 152 |
| File Size | 349392 |
| Page Count | 4 |
| File Format | |
| ISBN | 1424400872 |
| DOI | 10.1109/MELCON.2006.1653058 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-05-16 |
| Publisher Place | Spain |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Artificial neural networks Neural networks Indium gallium arsenide MESFETs Gallium arsenide PHEMTs Capacitance Indium phosphide Avalanche photodiodes Performance analysis |
| Content Type | Text |
| Resource Type | Article |
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