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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Gildenblat, G. McAndrew, C. Wang, H. Wu, W. Foty, D. Lemaitre, L. Bendix, P. |
| Copyright Year | 2004 |
| Description | Author affiliation: Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA (Gildenblat, G.) |
| Abstract | Recent progress in MOS device physics, model development, and model implementation processes has qualitatively changed the capabilities of compact models precisely at a time when the rapid expansion of RF MOSFET applications is imposing the most stringent demands on the new generation of MOSFET models. This work reviews the impact of the new modeling paradigm on MOSFET circuit simulation with particular attention to RF issues, non-quasi-static effects, and symmetric surface-potential-based models. General principles are illustrated with the simulation results using the latest generation compact MOSFET model (SP). |
| Starting Page | 638 |
| Ending Page | 641 |
| File Size | 778283 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780387155 |
| DOI | 10.1109/ICECS.2004.1399761 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-12-15 |
| Publisher Place | Israel |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Semiconductor device modeling MOSFET circuits Threshold voltage Radio frequency Circuit simulation Physics CMOS process Large scale integration Logic devices Logic design |
| Content Type | Text |
| Resource Type | Article |
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