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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Osman, R.A. Esa, S.R. Poopalan, P. |
| Copyright Year | 2007 |
| Description | Author affiliation: Northern Malaysia Univ. Coll. of Eng., Perlis (Osman, R.A.; Esa, S.R.; Poopalan, P.) |
| Abstract | Microfluidic devices, based on silicon, are fabricated by photolithography, wet chemical etching with focus on an liquid conduction channel n-channel depletion MOSFET and a silica-liquid dielectric capacitor. Masks for both devices were designed with AutoCAD and printed on transparencies. Fabrication on p-<100> 4" Si wafers were executed and the devices were marginally characterized due to complications. The gate channel for the liquid FET (LFET) were set to four-sizes, which are 250 mum, 500 mum, 750 mum an 1000 mum. The liquid capacitor (LCap) size was limited to only two, for lack of space on the wafer. A variety of processes were used to fabricate these devices. Tests show feasibility of the idea but proves process and process parameter control is extremely important and critical. |
| Starting Page | 321 |
| Ending Page | 327 |
| File Size | 1663863 |
| Page Count | 7 |
| File Format | |
| ISBN | 9781424407293 |
| ISSN | 10898190 |
| DOI | 10.1109/IEMT.2006.4456474 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-11-08 |
| Publisher Place | Malaysia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Fabrication Microfluidics MOSFET circuits Capacitors Silicon Lithography Chemicals Wet etching Dielectric devices Dielectric liquids |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Electrical and Electronic Engineering |
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