NDLI: Effect of frequency on fatigue crack growth along interface between copper film and silicon substrate

Content Provider	IEEE Xplore Digital Library
Author	Van Truong, D. Hirakata, H. Kitamura, T.
Copyright Year	2005
Description	Author affiliation: Graduate Sch. of Eng. Phys. & Mech., Kyoto Univ., Japan (Van Truong, D.)
Abstract	The mechanical crack growth along the interface between a submicron film (Cu) and a substrate (Si) under fatigue is experimentally investigated under two cyclic frequencies of 0.1 Hz and 1 Hz in a laboratory air (45 /spl plusmn/ 5% R.H.). A modified four-point bend specimen, which has only one interface crack to facilitate the control of crack growth, is proposed for the tests. The results reveal that the clear interface crack between Cu and Si grows under the cyclic load. The crack growth rate, da/dN, is governed by the stress intensity factor range, /spl Delta/K/sub i/, and the sigmoidal relationship consisting of three stages are observed in the da/dN - /spl Delta/K/sub i/ curve; the threshold, the stable growth and the critical growth. The region of subcritical crack growth is narrow due to the high yield stress of the thin film and the constraint by the substrate. The crack growth rate accelerates as the frequency decreases in the stable growth region. This is due to the effect of stress corrosion by the humidity in air.
Sponsorship	COE21, Tokyo Inst. of Technol. CASIO Sci. Promotion Found. Kao Found. for Arts and Sci
Starting Page	61
Ending Page	66
File Size	2629700
Page Count	6
File Format	PDF
ISBN	1424401070
DOI	10.1109/EMAP.2005.1598236
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-12-11
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Frequency Fatigue Copper Semiconductor films Silicon Substrates Stress Laboratories Testing Transistors
Content Type	Text
Resource Type	Article

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